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4N25/ 4N26/ 4N27/ 4N28 Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Galvanically separated circuits for general purposes 95 10532 B 6 C 5 E 4 Features D Isolation test voltage (RMS) 3.75 kV D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 95 10805 D Low coupling capacity of typical 1 pF D Current Transfer Ratio (CTR) of typical 100% D Low temperature coefficient of CTR 1 2 A (+) C (-) 3 n.c. Order Instruction Ordering Code 4N25/ 4N26 4N27/ 4N28 CTR Ranking >20% >10% Remarks Rev. A4, 11-Jan-99 79 4N25/ 4N26/ 4N27/ 4N28 Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 60 3 100 125 Unit V mA A mW C tp 10 ms Tamb 25C Output (Detector) Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions Symbol VCBO VCEO VECO IC ICM PV Tj Value 70 30 7 50 100 150 125 Unit V V V mA mA mW C tp/T = 0.5, tp 10 ms Tamb 25C Coupler Parameter Test Conditions Isolation test voltage (RMS) Total power dissipation Tamb 25C Ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t 10 s 1) Related to standard climate 23/50 DIN 50014 Symbol VIO 1) Ptot Tamb Tstg Tsd Value 3.75 250 -55 to +100 -55 to +125 260 Unit kV mW C C C 80 Rev. A4, 11-Jan-99 4N25/ 4N26/ 4N27/ 4N28 Vishay Telefunken Electrical Characteristics (Tamb = 25C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.5 Unit V pF Output (Detector) Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector dark current Collector dark current Test Conditions IC = 100 mA IE = 1 mA IE = 100 mA VCB = 10 V VCE = 10 V Symbol VCBO VCEO VECO ICBO ICEO Min. 70 30 7 Typ. Max. Unit V V V nA nA 0.1 3.5 20 50 Coupler Parameter Isolation test voltage (RMS) Isolation resistance Collector emitter saturation voltage Cut-off frequency Test Conditions f = 50 Hz, t = 2 s VIO = 1 kV, 40% relative humidity IF = 50 mA, IC = 2 mA Symbol VIO1) RIO1) VCEsat fc Ck 110 1 Min. 3.75 Typ. Max. Unit kV 1012 0.5 W V kHz pF VCE = 5 V, IF = 10 mA, RL = 100 W Coupling capacitance f = 1 MHz 1) Related to standard climate 23/50 DIN 50014 Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 10 V, IF = 10 mA Type 4N25, 4N26 4N27, 4N28 Symbol CTR CTR Min. 0.2 0.1 Typ. 1 1 Max. Unit Rev. A4, 11-Jan-99 81 4N25/ 4N26/ 4N27/ 4N28 Vishay Telefunken Switching Characteristics Parameter Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VCE = 10 V, IC = 10 mA, RL = 100 W ( (see figure 1) g ) VCE = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 2) g ) Symbol ton toff ton toff Typ. 4.0 3.0 9.0 18.0 Unit ms ms ms ms IF 0 RG = 50 W tp 0.01 T tp = 50 ms IF + 10 V IC = 10 mA ; Adjusted through input amplitude IF 0 tp IC Oscilloscope RL 1 MW CL 20 pF 100% 90% 96 11698 + t Channel I 50 W 95 10793 100 W Channel II Figure 1. Test circuit, non-saturated operation 10% 0 tr td ton ts toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) tf t IF 0 RG = 50 W tp T IF = 10 mA +5V IC + 0.01 tp tion td tr ton (= td + tr) storage time fall time turn-off time tp = 50 ms Channel I 50 W Channel II 1 kW Oscilloscope RL 1 MW CL 20 pF Figure 3. Switching times 95 10844 Figure 2. Test circuit, saturated operation 82 Rev. A4, 11-Jan-99 4N25/ 4N26/ 4N27/ 4N28 Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 300 P tot - Total Power Dissipation ( mW ) Coupled device ICEO- Collector Dark Current, with open Base ( nA ) 250 200 Phototransistor 150 IR-diode 100 50 0 0 96 11700 10000 VCE=10V IF=0 1000 100 10 1 40 80 120 96 11875 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature 1000.0 I CB - Collector Base Current ( mA ) Figure 7. Collector Dark Current vs. Ambient Temperature 1.000 VCB=10V I F - Forward Current ( mA ) 100.0 0.100 10.0 0.010 1.0 0.1 0 96 11862 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 0.001 1 96 11876 10 IF - Forward Current ( mA ) 100 Figure 5. Forward Current vs. Forward Voltage CTR rel - Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature ( C ) VCE=10V IF=10mA Figure 8. Collector Base Current vs. Forward Current 100.00 VCE=10V IC - Collector Current ( mA ) 10.00 1.00 0.10 0.01 0.1 96 11904 1.0 10.0 100.0 96 11874 IF - Forward Current ( mA ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature Figure 9. Collector Current vs. Forward Current Rev. A4, 11-Jan-99 83 4N25/ 4N26/ 4N27/ 4N28 Vishay Telefunken 1000 IF=50mA IC - Collector Current ( mA ) CTR - Current Transfer Ratio ( % ) 20mA VCE=20V 100.0 10.0 10mA 5mA 100 1.0 2mA 1mA 10 0.1 0.1 96 11905 1 1.0 10.0 100.0 95 10976 0.1 1 10 100 VCE - Collector Emitter Voltage ( V ) IF - Forward Current ( mA ) Figure 10. Collector Current vs. Collector Emitter Voltage V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 Figure 13. Current Transfer Ratio vs. Forward Current t on / t off - Turn on / Turn off Time ( m s ) 50 Saturated Operation VS=5V RL=1kW 0.8 20% 0.6 CTR=50% 0.4 0.2 10% 0 1 10 IC - Collector Current ( mA ) 100 40 30 toff 20 10 0 0 5 10 15 ton 20 95 10972 95 10974 IF - Forward Current ( mA ) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current 1000 Figure 14. Turn on / off Time vs. Forward Current t on / t off - Turn on / Turn off Time ( m s ) 20 Non Saturated Operation VS=10V RL=100W toff 10 ton 5 hFE - DC Current Gain 800 VCE=10V 600 5V 400 200 0 0.01 15 0 0.1 1 10 100 95 10975 0 2 4 6 8 10 95 10973 IC - Collector Current ( mA ) IC - Collector Current ( mA ) Figure 12. DC Current Gain vs. Collector Current Figure 15. Turn on / off Time vs. Collector Current 84 Rev. A4, 11-Jan-99 4N25/ 4N26/ 4N27/ 4N28 Vishay Telefunken Type Date Code (YM) XXXXXX 918 A TK 63 0884 V DE 15090 Production Location Safety Logo Coupling System Indicator Company Logo Figure 16. Marking example Dimensions in mm weight: 0.50 g creepage distance: air path:y 6 mm y 6 mm after mounting on PC board 14770 Rev. A4, 11-Jan-99 85 |
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